1/9 march 2004 . stp16nf06l STP16NF06LFP n-channel 60v - 0.07 ? - 16a to-220/to-220fp stripfet? ii power mosfet typical r ds (on) = 0.07 ? exceptional dv/dt capability low gate charge at 100 o c low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications motor control, audio amplifiers high current, high speed switching solenoid and relay drivers dc-dc & dc-ac converters automotive environment type v dss r ds(on) i d stp16nf06l stp60nf06lfp 60 v 60 v <0.09 ? <0.09 ? 16 a 11 a 1 2 3 1 2 3 to-220 to-220fp internal schematic diagram absolute maximum ratings ( ?) pulse width limited by safe operating area. (*) current limited by package?s thermal resistance (1) i sd 16a, di/dt 210a/s, v dd v (br)dss , t j t jmax. (2) starting t j = 25 o c, i d = 8a, v dd = 30v symbol parameter value unit stp16nf06l STP16NF06LFP v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k ? ) 60 v v gs gate- source voltage 16 v i d drain current (continuous) at t c = 25c 16 11(*) a i d drain current (continuous) at t c = 100c 11 7.5(*) a i dm ( ?) drain current (pulsed) 64 44(*) a p tot total dissipation at t c = 25c 45 25 w derating factor 0.3 0.17 w/c dv/dt (1) peak diode recovery voltage slope 23 v/ns e as (2) single pulse avalanche energy 127 mj v iso insulation withstand voltage (dc) -------- 2500 v t stg storage temperature -55 to 175 c t j operating junction temperature
stp16nf06l/fp 2/9 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 3.33 6 c/w rthj-amb t l thermal resistance junction-ambient maximum lead temperature for soldering purpose max 62.5 300 c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 12.5v r ds(on) static drain-source on resistance v gs = 5 v i d = 8 a v gs = 10 v i d = 8 a 0.08 0.07 0.10 0.09 ? ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds > i d(on) x r ds(on)max, i d =8 a 17 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 345 72 29 pf pf pf
3/9 stp16nf06l/fp switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 8 a r g =4.7 ? v gs = 4.5 v (resistive load, figure 3) 10 37 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 16 a v gs = 5v 7.3 2.1 3.1 10 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 8 a r g =4.7 ?, v gs = 4.5 v (resistive load, figure 3) 20 12.5 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 16 64 a a v sd (*) forward on voltage i sd = 16 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16 a di/dt = 100a/s v dd = 16 v t j = 150c (see test circuit, figure 5) 50 67.5 2.7 ns nc a electrical characteristics (continued) safe operating area for to-220 safe operating area for to-220fp
stp16nf06l/fp 4/9 thermal impedance thermal impedance for to-220fp output characteristics transfer characteristics transconductance static drain-source on resistance
5/9 stp16nf06l/fp gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics
stp16nf06l/fp 6/9 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/9 stp16nf06l/fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp16nf06l/fp 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/9 stp16nf06l/fp i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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